WOCSDICE 2008 CHARGE CONTROL ANALYSIS OF GALLIUM NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND COMPARISON WITH GaAs HFET FAILURE MECHANISMS
نویسندگان
چکیده
Conventional high electron mobility transistors (HFETs) based on AlGaN/GaN heterostructures have been accurately modeled and the results are described in this paper. The Schroedinger's equation and the Poisson's equation have been solved self-consistently in order to obtain a relationship between the sheet carrier density and the applied gate voltage. The relationship is treated using a non-linear exponential fit that enables a more accurate analysis of the saturation region compared to other models used hitherto.
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